Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure-Reference-Cited by-同舟云学术

Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure

Published:2006-07-03 Issue:1 Volume:89 Page:013106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tyschenko I. E.,Zhuravlev K. S.,Cherkov A. G.,Popov V. P.,Misiuk A.,Yankov R. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2219146

Reference10 articles.

1. Frontiers of silicon-on-insulator

2. A continuous-wave Raman silicon laser

3. Resonance Absorption by Nuclear Magnetic Moments in a Solid

4. Seventy-fold enhancement of light extraction from a defectless photonic crystal made on silicon-on-insulator

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