A Novel Memristor-Based SRAM Design with Improved Stability in Sub-Threshold Region-Reference-Cited by-同舟云学术

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A Novel Memristor-Based SRAM Design with Improved Stability in Sub-Threshold Region

Published:2022-08-16 Issue:6 Volume:103 Page:1863-1873
ISSN:2250-2106
Container-title:Journal of The Institution of Engineers (India): Series B
language:en
Short-container-title:J. Inst. Eng. India Ser. B

Author:

Gupta Himanshu,Bansal Sandeep^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,General Computer Science

Link

https://link.springer.com/content/pdf/10.1007/s40031-022-00774-y.pdf

Reference25 articles.

1. L. Oniciuc, P. Andrei, Sensitivity of static noise margins to random dopant variations in 6-T SRAM cells. Solid State Electron. 52(10), 1542–1549 (2008)

2. B. Cheng et al., Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells. Solid State Electron. 49(5), 740–746 (2005)

3. D.B. Strukov et al., Missing Memristor Found. Nat. 453(7191), 80 (2008)

4. L. Chua, Memristor-the missing circuit element. IEEE Trans. Circuit Theory 18(5), 507–519 (1971)

5. L.O. Chua, S.M. Kang, Memristive devices and systems. Proc. IEEE 64(2), 209–223 (1976)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Memristor-Based Power Efficient 4T3M SRAM Cell;2024 14th International Conference on Electrical Engineering (ICEENG);2024-05-21

2. Optimizing Power Efficiency in SRAM Cells through Memristor-Based Architectures;2024 International Conference on Machine Intelligence and Smart Innovation (ICMISI);2024-05-12

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