Memristor-Based Power Efficient 4T3M SRAM Cell-Reference-Cited by-同舟云学术

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Memristor-Based Power Efficient 4T3M SRAM Cell

Published:2024-05-21 Issue: Volume:801 Page:160-162
ISSN:
Container-title:2024 14th International Conference on Electrical Engineering (ICEENG)
language:
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Author:

Edward Nermine M.¹,Hamed Sahar M.²,Elaraby Nahla³,Anis W. R.¹

Affiliation:

1. Ain Shams University,Electronics and Communications Engineering Department,Cairo,Egypt

2. The Knoweldge Hub Universities, Coventry University,Electrical and Electronics Engineering Department,Cairo,Egypt

3. CIC TU Wien,Electronics and Communications Engineering Department,Vienna,Austria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10566277/10566280/10566426.pdf?arnumber=10566426

Reference15 articles.

1. Sensitivity of static noise margins to random dopant variations in 6-T SRAM cells

2. Memristor-The missing circuit element

3. Hybrid CMOS-memristor 4T-NVSRAM cell for low power applications

4. Statistical Analysis of 5T SRAM Cell for Low Power and Less Area SRAM Based Cache Memory for IoT Applications

5. Dual-vt sram cells with full-swing single-ended bit line sensing for high-performance on-chip cache in 0.13 μm technology generation;Hamzaoglu,2000

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