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Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells

  • Published:2005-05 Issue:5 Volume:49 Page:740-746
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Cheng B.,Roy S.,Roy G.,Adamu-Lema F.,Asenov A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs;Asenov;IEEE Trans Electron Dev,2003

2. A study of the threshold voltage variation for ultra-small bulk and SOI CMOS;Takeuchi;IEEE Trans Electron Dev,2001

3. The impact of intrinsic device fluctuations on CMOS SRAM cell stability;Bhavnagarwala;IEEE J Solid-State Circuits,2001

4. Applicability of quasi-3D and 3D MOSFET simulations in the ‘atomistic’ regime;Roy;J Computat Electron,2003

5. Integrated atomistic process and device simulation of decananometer MOSFETs;Asenov;Proc SISPAD,2002

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2. A Comparative Analyze of FinFET and Bulk MOSFET SRAM Design;2022 International Conference on Applied Physics and Computing (ICAPC);2022-09

3. A Novel Memristor-Based SRAM Design with Improved Stability in Sub-Threshold Region;Journal of The Institution of Engineers (India): Series B;2022-08-16

4. Nanoscale imaging of mobile carriers and trapped charges in delta doped silicon p–n junctions;Nature Electronics;2020-07-27

5. Characterization of Novel 8T SRAM with Low Leakage and Optimized Area;Carpathian Journal of Electronic and Computer Engineering;2019-09-01
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