Affiliation:
1. Department of Electrical and Electronic Engineering , Ahsanullah University of Science and Technology , Dhaka - 1208 , Bangladesh .
Abstract
Abstract
The fast evolution of battery functioned devices has caused approaches for decreasing power consumption in the memories is substantial. In this paper, a new proposal of SRAM with 8 transistors (8T) has been designed and also the cell itself is tested for its unique data overwriting and read propagation delays around 13.33% (read ‘1’) and 3.58% (read ‘0’) less compared to a conventional model. As the technology is attenuating, cell stability and increasing noise margin have become two crucial topics for the design metrics of SRAM, where our proposed cell appears with great stability on low voltage operation. Widespread simulation results authenticate the cogency and competency of the proposed 8T SRAM model using Cadence and 45nm predictive technology model (PTM).
Reference27 articles.
1. [1] S. Robert, Technological innovation in the semiconductor industry: a case study of the International Technology Roadmap for Semiconductors (ITRS). Diss. George Mason University, 2004.
2. [2] A. Paridhi, and S. Dasgupta, “A Comparative Study of 6T, 8T and 9T Decanano SRAM cell.” Industrial Electronics & Applications, 2009. ISIEA 2009. IEEE Symposium on. Vol. 2. IEEE, 2009.
3. [3] A. Asen, A. R. Brown, J. H. Davies, S. Kaya, and G. Slavcheva. “Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs.” IEEE transactions on electron devices 50, no. 9 (2003): 1837-1852.10.1109/TED.2003.815862
4. [4] M. Tomohisa, J. Okumtura, and A. Toriumi. “Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET’s.” IEEE Transactions on Electron Devices 41, no. 11 (1994): 2216-2221.10.1109/16.333844
5. [5] G. F. Cardinale, et al. “Demonstration of pattern transfer into sub-100 nm polysilicon line/space features patterned with extreme ultraviolet lithography.” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 17.6 (1999): 2970-2974.10.1116/1.590936
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献