Radiation-Induced Fault Simulation of SOI/SOS CMOS LSI’s Using Universal Rad-SPICE MOSFET Model-Reference-Cited by-同舟云学术

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Radiation-Induced Fault Simulation of SOI/SOS CMOS LSI’s Using Universal Rad-SPICE MOSFET Model

Published:2017-01-10 Issue:1 Volume:33 Page:37-51
ISSN:0923-8174
Container-title:Journal of Electronic Testing
language:en
Short-container-title:J Electron Test

Author:

Petrosyants Konstantin O.,Sambursky Lev M.,Kharitonov Igor A.,Lvov Boris G.

Funder

National Research University–Higher School of Economics, Academic Fund Program

Russian Foundation for Basic Research

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering

Link

http://link.springer.com/content/pdf/10.1007/s10836-016-5635-8.pdf

Reference28 articles.

1. Alvarado J, Boufouss E, Kilchytska V, Flandre D (2010) Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs. Microelectron Reliab 50:1852–1856

2. Bu J, Bi J, Liu M, Han Z (2011) A total dose radiation model for deep submicron PDSOI NMOS. J Semi 32(1):014002-1–014002-3

3. Cristoloveanu S, Li S (1995). Electrical characterization of silicon-on-insulator materials and devices (Vol. 305). Springer Science & Business Media

4. Dodd PE, Shaneyfelt MR, Schwank JR, Felix JA (2010) Current and future challenges in radiation effects on CMOS electronics. IEEE T Nucl Sci 57(4):1747–1763

5. Faruk MG, Wilkins R, Dwivedi RC, Kalaria D, Patel M, Binzaid S, Attia JO (2012) Proton and neutron radiation effects studies of MOSFET transistors for potential deep-space mission applications. Aerosp Conf Proc: 1–13

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