Metal Oxide Resistive Switching Memory
Author:
Publisher
Springer New York
Link
http://link.springer.com/content/pdf/10.1007/978-1-4419-9931-3_13.pdf
Reference146 articles.
1. Burr, G.W., Kurdi, B.N., Scott, J.C., Lam, C.H., Gopalakrishnan, K., Shenoy, R.S.: Overview of candidate device technologies for storage-class memory. IBM J. Res. Dev. 52, 449 (2008)
2. Kryder, M.H., Chang, S.K.: After hard drives – what comes next? IEEE Trans. Magn. 45, 3406 (2009)
3. Zhu, J.-G.: Magnetoresistie random access memory: the path to competitiveness and scalability. Proc. IEEE 96, 1786 (2008)
4. Arimoto, Y., Ishiwara, H.: Current status of ferroelectric random-access memory. MRS Bull. 29, 823 (2004)
5. Meijer, G.I.: Who wins the nonvolatile memory race? Science 319, 1625 (2008)
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