Effect of the coexistence of active metals and boron vacancies on the performance of 2D hexagonal boron nitride resistance memory

Author:

Ding Cheng,Dai YuehuaORCID,Wang Feifei,Li Xing,Gao Jianhua,Yang Bin,Lu Wenjuan,Yang Fei

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference64 articles.

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5. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

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