Plasma enhanced chemical vapor deposition of SiO2 films at low temperatures using SiCl4 and O2-Reference-Cited by-同舟云学术

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Plasma enhanced chemical vapor deposition of SiO2 films at low temperatures using SiCl4 and O2

Published:1990-12 Issue:12 Volume:19 Page:1411-1415
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Ortiz A.,Lopez S.,Falcony C.,Farias M.,Cota-Araiza L.,Soto G.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02662831.pdf

Reference12 articles.

1. A. C. Adams, Solid State Technol.26, 135 (1983).

2. R. H. Vogel, S. R. Butler, and F. J. Feigl, J. Electron. Mater.14, 329 (1985).

3. M. E. Zvanut, F. J. Feigl, S. R. Butler and S. L. Titcomb, J. Electron. Mater.14, 343 (1985).

4. C. Kaya, T. P. Ma and R. C. Barker, J. Appl. Phys.64, 3958 (1988).

5. J. Batey and E. Tierney, J. Appl. Phys.60, 3136 (1986).

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1. Low temperature (<700 °C) SiO2 and Si-rich SiO2 films: Short review;Journal of Vacuum Science & Technology B;2023-04-17

2. Etch Mechanism and Temperature Regimes of an Atmospheric Pressure Chlorine-Based Plasma Jet Process;Plasma Processes and Polymers;2016-07-08

3. Formation of a Nanoscale SiO2Capping Layer on Photoresist Lines with an Ar/SiCl4/O2Inductively Coupled Plasma: A Modeling Investigation;Plasma Processes and Polymers;2013-11-18

4. Numerical Investigation of SiO2 Coating Deposition in Wafer Processing Reactors with SiCl4 /O2 /Ar Inductively Coupled Plasmas;Plasma Processes and Polymers;2013-05-28

5. Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2003-07

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