Numerical Investigation of SiO2 Coating Deposition in Wafer Processing Reactors with SiCl4 /O2 /Ar Inductively Coupled Plasmas
Author:
Affiliation:
1. Research Group PLASMANT, Department of Chemistry; University of Antwerp; Universiteitsplein 1 B-2610 Antwerp Belgium
2. Interuniversity Microelectronics Centre; Kapeldreef 75 B-3001 Leuven Belgium
Funder
Hercules Foundation
Flemish Government
University of Antwerp
Publisher
Wiley
Subject
Polymers and Plastics,Condensed Matter Physics
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/ppap.201300005/fullpdf
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4. Effect of hydrogen dilution on the remote plasma enhanced chemical vapor deposition of chlorinated SiO2 films
5. SiO2 prepared by remote plasma-enhanced chemical vapor deposition using SiCl4 and O2 at substrate temperatures of less than 200 °C
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