Correlation between Kink effect and trapping mechanism through H1 hole trap in Al0.22Ga0.78N/GaN/SiC HEMTs by current DLTS: field effect enhancement
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
http://link.springer.com/content/pdf/10.1007/s00339-020-03756-3.pdf
Reference59 articles.
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3. G. Meneghesso et al., Reliability of GaN high-electron-mobility transistors: state of the art and perspectives. IEEE Trans. Dev. Mater. Reliab. 8(2), 332–343 (2008). https://doi.org/10.1109/TDMR.2008.923743
4. M. Faqir et al., Analysis of current collapse effect in AlGaN/GaN HEMT: experiments and numerical simulations. Microelectron. Reliab. 50(9–11), 1520–1522 (2010). https://doi.org/10.1016/j.microrel.2010.07.020
5. S. Saadaoui, M.M. BenSalem, M. Gassoumi, H. Maaref, C. Gaquière, Anomaly and defects characterization by I–V and current deep level transient spectroscopy of Al0.25 Ga0.75 N/GaN/SiC high electron-mobility transistors. J. Appl. Phys. 111(7), 073713 (2012). https://doi.org/10.1063/1.3702458
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