Author:
Faqir M.,Bouya M.,Malbert N.,Labat N.,Carisetti D.,Lambert B.,Verzellesi G.,Fantini F.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. 12W/mm power density AlGaN/GaN HEMTs on sapphire substrate;Chini;Electron Lett,2004
2. Zanoni E, Meneghesso G, Verzellesi G, Danesin F, Meneghini M, Rampazzo F, et al. A review of failure modes and mechanisms of GaN-based HEMTs. In: IEDM tech dig, 2007. p. 381–84.
3. Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates;Lee;Electron Lett,2004
4. Substrate related kink effects with a strong light-sensitivity in AlGaAs/InGaAs PHEMTs;Haruyama;IEEE Trans Electron Dev,1997
5. Brar B, Boutros K, DeWames RE, Tilak V, Shealy R, Eastman L. Impact ionization in high performance AlGaN/GaN HEMTs. In: Proc IEEE lester eastman conf high perform dev, 2002. p. 487–91.
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