Author:
Rewari Sonam,Nath Vandana,Haldar Subhasis,Deswal S. S.,Gupta R. S.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Reference21 articles.
1. B. Yu, H. Lu, M. Liu, Y. Taur, Explicit continuous model for double gate and surrounding gate MOSFET. IEEE Trans. Electron. Device 54(10), 2715–2722 (2007)
2. P. Kumar, D. Joy, B.K. Jeblin, Nanoscale trigate MOSFET for Ultra low power applications using high-k dielectrics, in 5th IEEE International Conference on Nanoelectronics, 2013, INEC 2013, pp. 12–19 (2013)
3. D. Jimenez, J.J. Saenz, B. Iniguez, J. Sune, L.F. Marsal, J. Pallares, Modeling of nanoscale gate-all-around MOSFETs. IEEE Electron Device Lett. 25(5), 314–316 (2004)
4. K. H. Yeo, S. D. Suk, M. Li, Y. Yeoh, K. H. Cho, K.-H. Hong, S. Yun, M. S. Lee, N. Cho, K. Lee, D. Hwang, B. Park, D.-W. Kim, D. Park, B.-I. Ryu, Gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 15 nm length gate and 4 nm radius nanowires, in IEDM Technical Digest, pp. 1–4 (2006)
5. J. Colinge, C. Lee, A. Afzalian, N. Akhavan, R. Yan, I. Ferain, P. Razavi, B. O’Neill, A. Blake, M. White, A.M. Kelleher, B. McCarthy, R. Murphy, Nanowire transistor without junctions. Nat. Nanotechnol. 5(3), 225–229 (2010)
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