Gate-All-Around (GAA) Twin Silicon Nanowire MOSFET (TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires-Reference-Cited by-同舟云学术

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Gate-All-Around (GAA) Twin Silicon Nanowire MOSFET (TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires

Published:2006-12 Issue: Volume: Page:
ISSN:
Container-title:2006 International Electron Devices Meeting
language:
Short-container-title:

Author:

Yeo Kyoung Hwan,Suk Sung Dae,Li Ming,Yeoh Yun-young,Cho Keun Hwi,Hong Ki-Ha,Yun SeongKyu,Lee Mong Sup,Cho Nammyun,Lee Kwanheum,Hwang Duhyun,Park Bokkyoung,Kim Dong-Won,Park Donggun,Ryu Byung-Il

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154257.pdf?arnumber=4154257

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