Interface trap density in amorphous La2Hf2O7/SiO2 high-κ gate stacks on Si-Reference-Cited by-同舟云学术

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Interface trap density in amorphous La2Hf2O7/SiO2 high-κ gate stacks on Si

Published:2005-02 Issue:2 Volume:80 Page:253-257
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Mereu B.,Dimoulas A.,Vellianitis G.,Apostolopoulos G.,Scholz R.,Alexe M.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-004-2910-9.pdf

Reference36 articles.

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2. G.D. Wilk, R.M. Wallace, J.M. Anthony: J. Appl. Phys. 89, 5243 (2001)

3. T. Ghani, K. Mistry, P. Packan, S. Thompson, M. Stettler, S. Tyagi, M. Bohr: Tech. Dig. VlSI Symp. 174–175 (2000)

4. R. Chau, J. Kavalieros, B. Roberds, R. Schenker, D. Lionberger, D. Barlage, B. Doyle, R. Arghavani, A. Murthy, G. Dewey: Tech. Dig. IEDM 45–48 (2000)

5. G.B. Alers, R.M. Fleming, Y.H. Wong, B. Dennis, A. Pinczuk, G. Redinbo, R. Urdahl, E. Ong, Z. Hasan: Appl. Phys. Lett. 72, 1308 (1998)

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