Author:
Yan Yong,Zhou Dayu,Guo Chunxia,Xu Jin,Yang Xirui,Liang Hailong,Zhou Fangyang,Chu Shichao,Liu Xiaoying
Funder
National Natural Science Foundation of China (CN)
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Condensed Matter Physics,Biomaterials,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Robertson J (2004) High dielectric constant oxides. Eur Phys J Appl Phys 28:265–291
2. Choi JH, Mao Y, Chang JP (2011) Development of hafnium based high-k materials—a review. Mater Sci Eng R 72:97–136
3. Akbar MS, Cho HJ, Choi R, Kang CS, Kang CY, Choi CH, Rhee SJ, Kim YH, Lee JC (2004) Optimized NH3 annealing process for high-quality HfSiON gate oxide. IEEE Electron Device Lett 25:465–467
4. Tomida K, Kita K, Toriumi A (2006) Dielectric constant enhancement due to Si incorporation into HfO2. Appl Phys Lett 89:2902
5. Park PK, Kang SW (2006) Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3. Appl Phys Lett 89:2905
Cited by
18 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献