Impact of crystallinity on coexistence of negative differential resistance (NDR) and write once read many (WORM) resistive switching memory in multiferroic BiFeO3 (BFO)-Reference-Cited by-同舟云学术

Impact of crystallinity on coexistence of negative differential resistance (NDR) and write once read many (WORM) resistive switching memory in multiferroic BiFeO3 (BFO)

Published:2023-01-16 Issue:2 Volume:129 Page:
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Prakash Chandra,Yadav Ankit K.,Dixit Ambesh^ORCID

Funder

SERB, DST, Government of India

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

https://link.springer.com/content/pdf/10.1007/s00339-022-06372-5.pdf

Reference58 articles.

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3. X. Liu, M.T. Mayer, D. Wang, Negative differential resistance and resistive switching behaviors in Cu2S nanowire devices. Appl Phys Lett 96(22), 223103 (2010). https://doi.org/10.1063/1.3442919

4. X. Ran, P. Hou, J. Song, H. Song, X. Zhong, J. Wang, Negative differential resistance effect in resistive switching devices based on H-LuFeO3/CoFe2O4 heterojunctions. Phys. Chem. Chem. Phys. 22(10), 5819–5825 (2020). https://doi.org/10.1039/D0CP00530D

5. M. Ismail, S. Kim, Negative differential resistance effect and dual bipolar resistive switching properties in a transparent Ce-based devices with opposite forming polarity. Appl Surf Sci. 530, 147284 (2020). https://doi.org/10.1016/j.apsusc.2020.147284

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