Negative differential resistance effect in resistive switching devices based on h-LuFeO3/CoFe2O4 heterojunctions-Reference-Cited by-同舟云学术

Negative differential resistance effect in resistive switching devices based on h-LuFeO3/CoFe2O4 heterojunctions

Published:2020 Issue:10 Volume:22 Page:5819-5825
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Ran Xinxin¹²³⁴^ORCID,Hou Pengfei¹²³⁴⁵^ORCID,Song Jiaxun¹²³⁴,Song Hongjia¹²³⁴,Zhong Xiangli¹²³⁴^ORCID,Wang Jinbin¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. Xiangtan University

3. Xiangtan 411105

4. China

5. Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory

Abstract

The polarization and interfacial defect modulated NDR effect shows good reproducibility for hundreds of cycles in h-LuFeO₃/CoFe₂O₄ heterojunction-based RS devices.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Natural Science Foundation of Hunan Province

Scientific Research Foundation of Hunan Provincial Education Department

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP00530D

Reference54 articles.

1. Resonant tunnelling and negative differential conductance in graphene transistors

2. Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device

3. Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire

4. A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

5. Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiO x Modulated by Moisture

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