Author:
Kolli Sowmya,Sunkara Mahendra,Alphenaar Bruce
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. J.L. Hudgins, G.S. Simin, E. Santi, M.A. Khan, An assessment of wide bandgap semiconductors for power devices. IEEE Trans. Power Electron. 18(3), 907–914 (2003)
2. I. Akasaki, H. Amano, Present and future of group III nitride semiconductors, in Compound Semiconductors 1995, vol. 145, ed. by J.C. Woo, Y. S. Park (Institute of Physics Conference Series, Bristol, 1996) pp. 19–22
3. R. Dwiliński et al., Recent achievements in AMMONO-bulk method. J. Cryst. Growth 312(18), 2499–2502 (2010)
4. B. Weiss, R. Reiner, P. Waltereit, R. Quay, O. Ambacher, Analysis and modeling of GaN-based multi field plate Schottky power diodes, in 2016 IEEE 17th Workshop on Control and Modeling for Power Electronics (COMPEL), 2016, pp. 1–6
5. J. Ma, D.C. Zanuz, E. Matioli, Field plate design for low leakage current in lateral GaN power Schottky diodes: role of the pinch-off voltage. IEEE Electron Device Lett. 38(9), 1298–1301 (2017)
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献