Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions
Author:
Affiliation:
1. Sandia National Laboratories, Albuquerque, NM, USA
Funder
Advanced Research Projects Agency-Energy
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/16/9741401/9732899-aam.pdf
Reference49 articles.
1. Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam–Induced Current
2. Characterization of Pd/Ni/Au ohmic contacts on p-GaN
3. 10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes
4. On impact ionization and avalanche in gallium nitride
5. Simulations of Junction Termination Extensions in Vertical GaN Power Diodes
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