Funder
Young Scientists Fund
China Postdoctoral Science Foundation
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference94 articles.
1. C.C. Wu, D.W. Lin, A. Keshavarzi et al., High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme. 2010 International Electron Devices Meeting (IEEE, 2010), pp. 27.1.1–27.1.4
2. M.T. Bohr, I.A. Young, CMOS scaling trends and beyond. IEEE Micro 37(6), 20–29 (2017)
3. H.N. Khan, D.A. Hounshell, E.R.H. Fuchs, Science and research policy at the end of Moore’s law. Nat. Electron. 1(1), 14 (2018)
4. T.E. Kazior, Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems. Philos. Trans. R. Soc. A 372(2012), 20130105 (2014)
5. E. Stern, J.F. Klemic, D.A. Routenberg et al., Label-free immunodetection with CMOS-compatible semiconducting nanowires. Nature 445(7127), 519 (2007)
Cited by
119 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献