Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference34 articles.
1. Colinge, J.P., Gao, M.H., Romano-Rodriguez, A., et al.: Silicon-on-insulator “gate-all-around device”. In: International Technical Digest on Electron Devices IEEE, pp. 595–598 (1990)
2. I. Ferain, C.A. Colinge, J.-P. Colinge, Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors. Nature 479, 310–316 (2011)
3. H.H. Radamson, Y. Zhang, X. He et al., The challenges of advanced CMOS process from 2D to 3D. Appl. Sci. 1047, 1–32 (2017)
4. V. Pott, K.E. Moselund, D. Bouvet, L. De Michielis, A.M. Ionescu et al., Fabrication and characterization of gate-all-around silicon nanowires on bulk silicon. IEEE Trans. Nanotechnol. 7(6), 733–743 (2008)
5. D.-I. Moon, S.-J. Choi, J.P. Duarte et al., Investigation of silicon nanowire gate-all-around junctionless transistors built on a bulk substrate. IEEE Trans. Electron Devices 60(4), 1355–1360 (2013)
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