1. See for example the following reviews:Handbook of Electronic Materials, 3, John T. Milek, “Silicon Nitride for Microelectronic Applications, Part I” IFI/Plenum (1971);
2. P. Balk, “Layer Dielectrics in MOS Technology,” inSolid State Devices (1973), edited by H. Weiss, Institute of Physics, London and Bristol, (1973), p. 51; C. T. Nabor and G. C. Lockwood, “Processing of MNOS Non-volatile Memories,” inSemiconductor Silicon 1973, edited by H. R. Huff and R. R. Burgess, Electrochemical Society, Princeton, N. J., (1973), p. 401.
3. J. H. Scott and J. Olmstead, “Low Temperature Deposition of Si3N4,” Meeting of Electrochemical Society, Philadelphia 1966, Extended Abstract 151; W. A. Kohler, “Structural Properties of Vapor Deposited Silicon Nitride,” Metallurgical Trans. 1, 735 (1970).
4. S. Zirinsky, “Charge Transfer Properties of MNOS Structures as Influenced by Processing Parameters,” J. Elect. Mtls.,4, 591 (1975).
5. B. E. Deal, E. L. McKenna, and P. L. Castro, “Character- istics of Fast Surface States Associated with SiO2-Si and Si3N4-SiO2-Si Structures,” J. Electrochem. Soc.116, 997 (1969).