1. E. C. Ross, A. M. Goodman, and M. T. Duffy, “Opera-tional Dependence of the Direct Tunneling Mode MNOS Memory Transistor on the SiO2. Layer Thickness,” RCA Review,31, 1970, p. 467.
2. A. M. Goodman, E. C. Ross, and M. T. Duffy, “Optimization of Charge Storage in the MNOS Memory Device,” RCA Review,31, 1970, p. 342.
3. C. T. Nabor, G. C. Lockwood, “Processing of MNOS Non-Volatile Memories,” Semi-Conductor Silicon, 1973 Ed., p. 401 (Electrochem. Soc, Princeton, N.J.)
4. M. H. White, J. R. Cricchi, “Characterization of Thin Oxide MNOS Memory Transistors,” I.E.E.E. Trans. Electron Devices,Ed. 19, No. 12, Dec. 1972, p. 1280.
5. K. I. Lundström, C. M. Svensson, “Properties of MNOS Structures,” I.E.E.E. Trans. Electron Devices,Ed. 19, No. 6, June 1972, p. 826.