Mesh Zoning Method for Electro - Thermal Analysis of Submicron Si MOSFET-Reference-Cited by-同舟云学术

Mesh Zoning Method for Electro - Thermal Analysis of Submicron Si MOSFET

Published:2006 Issue:2 Volume:1 Page:101-112
ISSN:1880-5566
Container-title:Journal of Thermal Science and Technology
language:en
Short-container-title:JTST

Author:

HATAKEYAMA Tomoyuki¹²,FUSHINOBU Kazuyoshi¹,OKAZAKI Ken¹

Affiliation:

1. Department of Mechanical and Control Engineering, Tokyo Institute of Technology

2. JSPS Research Fellow

Publisher

Japan Society of Mechanical Engineers

Subject

Engineering (miscellaneous),Instrumentation,General Materials Science,Atomic and Molecular Physics, and Optics

Link

http://www.jstage.jst.go.jp/article/jtst/1/2/1_2_101/_pdf

Reference18 articles.

1. (1) International Technology Roadmap of Semiconductors 2005 Edition, http://public.itrs.net/

2. (2) Fushinobu, K. and Maruyama, H., Numerical Calculation of Sub-micron Hot Spot in Si Devices, Proceeding of IPACK03, (2003-7), InterPack2003-35079

3. (3) Tien, C. L., Microscale Energy Transport, (1998), pp. 67-92 (for governing equations), pp. 264-271 (for the difference between optical and acoustic phonon), Taylor & Francis

4. ENERGY‐MOMENTUM TRANSPORT MODEL SUITABLE FOR SMALL GEOMETRY SILICON DEVICE SIMULATION

5. (5) Tanimoto, H. and Shigyo, N., Discretization Error in MOSFET Device Simulation, IEEE Transport on Computer-Aided Design, Vol. 11, No. 7 (1992), pp. 921-925

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