ENERGY‐MOMENTUM TRANSPORT MODEL SUITABLE FOR SMALL GEOMETRY SILICON DEVICE SIMULATION-Reference-Cited by-同舟云学术

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ENERGY‐MOMENTUM TRANSPORT MODEL SUITABLE FOR SMALL GEOMETRY SILICON DEVICE SIMULATION

Published:1990-01 Issue:1 Volume:9 Page:1-22
ISSN:0332-1649
Container-title:COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
language:en
Short-container-title:COMPEL

Author:

ROBERTS James W.,CHAMBERLAIN Savvas G.

Publisher

Emerald

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computational Theory and Mathematics,Computer Science Applications

Reference19 articles.

1. Transport equations for electrons in two-valley semiconductors

2. Computer simulation of transferred electron devices using the displaced Maxwellian approach

3. Simulation of GaAs IMPATT diodes including energy and velocity transport equations

4. Carrier mobilities in silicon empirically related to doping and field

5. Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electro-Thermal Behavior of a Sub-Micrometer Bulk CMOS Device: Modeling of Heat Generation and Prediction of Temperatures;Heat Transfer Engineering;2008-02

2. Electro-Thermal Analysis of Submicron Si MOSFET with Zoned Mesh Based on Semiconductor Physics Theory;Journal of Thermal Science and Technology;2008

3. Mesh Zoning Method for Electro - Thermal Analysis of Submicron Si MOSFET;Journal of Thermal Science and Technology;2006

4. Numerical algorithms for the FDiTD and FDFD simulation of slowly varying electromagnetic fields;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;1999-01

5. Hydrodynamic Simulation of Semiconductor Devices;Progress in Quantum Electronics;1997-07

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