Analysis of Heat Generation from a Power Si MOSFET

Author:

Kibushi Risako,Hatakeyama Tomoyuki,Nakagawa Shinji,Ishizuka Masaru

Publisher

Japan Institute of Electronics Packaging

Reference13 articles.

1. [1] C. Lallement, R. Bouchakour, and T. Maurel, "One-dimensional analytical modeling of the VDMOS transistor taking into account the thermoelectrical interactions," Annales Des Telecommunications, Vol. 49, No. 9-10, pp. 543-553, 1994.

2. [2] P. Magnone, C. Fiegna, G. Greco, G. Bazzano, S. Rinaudo, and E. Sangiorgi, "Numerical simulation and modeling of thermal transient in silicon power devices," Solid-State Electronics, Vol. 88, pp. 69-72, 2013.

3. [3] E. Pop, S. Sinha, and K. E. Goodson, "Heat Generation and Transport in Nanometer-Scale Transistors," Proceedings of the IEEE, Vol. 94, No. 8, pp. 1587-1601, 2006.

4. [4] J. Lai and A. Majumdar, "Concurrent Thermal and Electrical Modeling of Sub-micrometer Silicon Devices," Journal of Applied Physics, Vol. 79, No. 9, pp. 7353-7361, 1996.

5. [5] S. Sinha, E. Pop, and K. E. Goodson, "A Split-Flux Model for Phonon Transport Near Hotspots," Proceeding of IMECE04, IMECE2004-61949, pp. 75-85, 2004.

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