Assumption of Heat Generation in CFD Analysis for Accurate Tempearture Distribution of Power Si MOSFET
Author:
Affiliation:
1. Dept. of Mechanical Engineering, Tokyo University of Science, Yamaguchi
2. Dept. of Mechanical Systems Engineering, Toyama Prefectural University
Publisher
Japan Institute of Electronics Packaging
Link
https://www.jstage.jst.go.jp/article/jiepeng/10/0/10_E16-016-1/_pdf
Reference8 articles.
1. [1] P. Spirito, G. Breglio, V. d’Alessandro, and N. Rinaldi, "Thermal Instabilities in High Current Power MOS Device: Experimental Evidence, Electro-thermal Simulation and Analytical Modeling," Proceeding of 23rd International Conference on Micriekectribucs, Vol. 1, No. 23-30, 2002.
2. [2] E. Pop and K. E. Goodson, "Heat Generation and Transport in Nanometer-Scale Transistors," Proceeding of the IEEE, Vol. 94, No. 8, pp. 1587-1599, 2006.
3. [3] J. Lai and A. Majumdar, "Concurrent Thermal and Electrical Modeling of Sub-micronmeter Silicon Devices," Journal of Applied Physics, Vol. 79, No. 9, pp. 7353-7361, 1996.
4. [4] S. Sinha, E. Pop, and K. E. Goodson, "A Split-Flux Model for Phonon Transport Near Hotspots," Proceeding of IMECE04, IMECE2004-61949, pp. 75-85, 2004.
5. [5] K. Fushinobu and H. Maruyama, "Numerical Calculation of Sub-Micron Hot Spot in Si Device," Proceeding of IPACK2003, IPACK2013-3579, 2003.
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