Thermal performance evaluation of cascode Paralleled-GaN-HEMTs packaging for high power switching applications-Reference-Cited by-同舟云学术

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Thermal performance evaluation of cascode Paralleled-GaN-HEMTs packaging for high power switching applications

Published:2017 Issue:2 Volume:12 Page:JTST0022-JTST0022
ISSN:1880-5566
Container-title:Journal of Thermal Science and Technology
language:en
Short-container-title:JTST

Author:

CHOU Hsin-Ping¹,CHENG Stone¹

Affiliation:

1. Department of Mechanical Engineering, National Chiao-Tung University

Publisher

Japan Society of Mechanical Engineers

Subject

Engineering (miscellaneous),Instrumentation,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.jstage.jst.go.jp/article/jtst/12/2/12_2017jtst0022/_pdf

Reference51 articles.

1. Albrecht, J. D., Wang, R. P., Ruden, P. P., Farahmand, M., & Brennan, K. F. (1998). Electron transport characteristics of GaN for high temperature device modeling. Journal of Applied Physics, 83(9), 4777-4781. doi:doi:http://dx.doi.org/10.1063/1.367269

2. Albright, G. C., Stump, J. A., McDonald, J. D., & Kaplan, H. (1999). True temperature measurements on microscopic semiconductor targets.

3. Ambacher, O., Foutz, B., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Stutzmann, M. (2000). Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. Journal of Applied Physics, 87(1), 334-344. doi:10.1063/1.371866.

4. Avenas, Y., Dupont, L., & Khatir, Z. (2012). Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters -- A Review. IEEE Transactions on Power Electronics, 27(6), 3081-3092. doi:10.1109/TPEL.2011.2178433.

5. Benbakhti, B., Rousseau, M., & De Jaeger, J. C. (2007). Physical study of the dissipated power area in high electron mobility transistors for thermal modelling. Microelectronics Journal, 38(1), 7-13. doi:http://dx.doi.org/10.1016/j.mejo.2006.07.025.

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1. Thermal Performance Improvement Approach of GaN Power Electronic Devices for Automotive EPS Motor Drivers;2024 10th International Conference on Applied System Innovation (ICASI);2024-04-17

2. Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications;Semiconductor Science and Technology;2023-05-26

3. Integrated GaN HEMT Cascode Power Module Stability Analysis under Negative Gate Bias Stress for Power Electronic Applications;IFAC PAPERSONLINE;2022

4. Integrated GaN HEMT Cascode Power Module Stability Analysis under Negative Gate Bias Stress for Power Electronic Applications;IFAC-PapersOnLine;2022

5. Temperature-Dependent Hot Electron Effects and Degradation Mechanisms in 650-V GaN-Based MIS-HEMT Power Devices Under Hard Switching Operations;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021-10

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