1. Thermal modeling and measurement of GaN-based HFET devices;Park;IEEE Electron Device Lett.,2003
2. J.-C. Jacquet, R. Aubry, H. Gérard, E. Delos, N. Rolland, Y. Cordier, A. Bussutil, M. Rousseau, S.L. Delage, Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement, 12th GAAS Symposium, Amsterdam, 2004, pp. 235–238.
3. Ka-band high-power and driver MMIC amplifiers using GaAs PHEMTs and coplanar waveguides;Bessemoulin;IEEE Microwave Guided Wave Lett.,2000
4. Evaluation of active semiconductor structures by combined scanning thermo-elastic microscopy and finite element simulations;Nzodoum Fotsing;J. Phys. IV,2005
5. Two-dimensional hydrodynamic model including inertia effects in carrier momentum for power millimetre-wave semi-conductor devices;Rousseau;Solid State Electron.,2003