Wear Resistance of N+-Implanted Silicon Investigated by Scanning Probe Microscopy
Author:
Miyamoto T.1, Yokohata T.2, Miyake S.3, Bogy D. B.4, Kaneko R.1
Affiliation:
1. NTT Interdisciplinary Research Laboratories, 3-9-11, Midori-cho, Musashino-shi, Tokyo 180, Japan 2. Fujitsu Limited, 10-1, Morinosato-wakamiya, Atsugi 243-01, Japan 3. Nippon Institute of Technology, 4-1, Gakuendai, Miyashiro-machi, Minamisaitama-gun, Saitama 345, Japan 4. University of California, Berkeley, 6195 Etcheverry Hall, Berkeley, CA 94720
Abstract
A scanning probe microscope with a 80 nm radius diamond tip was used to investigate the wear resistance of single-crystal silicon and N+-implanted silicon. The N+ implantation conditions were 35 to 150 keV and 5 × 1016 ions/cm2. The N+ concentration depth profile was analyzed by using secondary ion mass spectrometry, and the chemical structure of N+-implanted silicon was also analyzed by using x-ray photoelectron spectroscopy. The following results were obtained. The maximum N+ concentration on the ion-implanted silicon shifted further below the surface and the thickness of the high ion concentration region increased with the implantation energy. The high N+ concentration region using multiple energies of 35–150 keV during the same ion implantation process was wider than that for the N+-implanted silicon using a single energy. The wear resistance of ion-implanted silicon was higher than that of single-crystal silicon. The N+-implanted silicon using multiple energies during the same ion implantation process showed higher wear durability than that of the N+-implanted silicon using a single energy. The Si2p spectrum of the high N+ concentration region implied a structure similar to a Si3N4 film, which resulted in higher wear resistance.
Publisher
ASME International
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanical Engineering,Mechanics of Materials
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