Special Section on the Dynamics of MEMS and NEMS

Author:

Rhoads Jeffrey F.1,Cho Hanna2,Judge John3,Krylov Slava4,Shaw Steven W.5,Younis Mohammad6

Affiliation:

1. School of Mechanical Engineering, Ray W. Herrick Laboratories, Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 e-mail: jfrhoads@purdue.edu

2. Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, OH 43210

3. School of Engineering, Catholic University of America, Washington, DC 20064

4. School of Mechanical Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 69978, Israel

5. Department of Mechanical and Aerospace Engineering, Florida Institute of Technology, Melbourne, FL 32901

6. Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955, Saudi Arabia

Publisher

ASME International

Subject

General Engineering

Reference16 articles.

1. A Resonant-Gate Silicon Surface Transistor With High-Q Band-Pass Properties;Appl. Phys. Lett.,1965

2. The Resonant Gate Transistor;IEEE Trans. Electron Devices,1967

3. Micromachined Resonant Sensors: An Overview;Sens. Update,1998

4. Silicon Resonant Microsensors;Ceram. Eng. Sci. Proc.,1987

5. Resonant Silicon Sensors;J. Micromech. Microeng.,1991

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