High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process-Reference-Cited by-同舟云学术

High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process

Published:2007 Issue:10 Volume:48 Page:2782-2786
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Shibata Hiroyuki¹,Waseda Yoshio¹²,Ohta Hiromichi³,Kiyomi Kazumasa⁴,Shimoyama Kenji⁵,Fujito Kenji⁴,Nagaoka Hirobumi⁴,Kagamitani Yuji¹,Simura Rayko¹,Fukuda Tsuguo¹

Affiliation:

1. Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University

2. Centre for Advanced Nitride Technology, Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University

3. Faculty of Engineering, Ibaragi University

4. Optoelectronics Laboratory, Mitsubishi Chemical Corporation

5. Optoelectronics Department, Mitsubishi Chemical Corporation

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/48/10/48_MRP2007109/_pdf

Reference19 articles.

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2. 2) E. K. Sichel and J. I. Pankove: J. Phys. Chem. Solids 38 (1977) 330.

3. 3) G. A. Slack: J. Phys. Chem. Solids 34 (1973) 321–335.

4. 4) A. Witek: Diamond and Related Materials 7 (1998) 962–964.

5. 5) D. I. Florescu, V. M. Asnin, F. H. Pollak, R. J. Molnar and C. E. C. Wood: J. Appl. Phys. 88 (2000) 3295–3300.

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