High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence-Reference-Cited by-同舟云学术

High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence

Published:2000-09-15 Issue:6 Volume:88 Page:3295-3300
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Florescu D. I.,Asnin V. M.,Pollak Fred H.,Molnar R. J.,Wood C. E. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1289072

Reference24 articles.

1. Blue-Green Light-Emitting Diodes and Violet Laser Diodes

2. GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors

3. Thermal conductivity of GaN, 25–360 K

4. High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope

5. Thermal conductivity of lateral epitaxial overgrown GaN films

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