Preferential Growth of Al (110) Films on GaAs (100) Surfaces under Rapid Vapor Deposition in Ordinary High Vacuum-Reference-Cited by-同舟云学术

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Preferential Growth of Al (110) Films on GaAs (100) Surfaces under Rapid Vapor Deposition in Ordinary High Vacuum

Published:2000 Issue:9 Volume:41 Page:1263-1267
ISSN:0916-1821
Container-title:Materials Transactions, JIM
language:en
Short-container-title:Mater. Trans., JIM

Author:

Sugawara Shigeo¹

Affiliation:

1. Department of Materials Science and Engineering, Faculty of Engineering and Resource Science, Akita University

Publisher

Japan Institute of Metals

Subject

General Engineering

Link

https://www.jstage.jst.go.jp/article/matertrans1989/41/9/41_9_1263/_pdf

Reference4 articles.

1. 1) R. Ludeke, L. L. Chang and L. Esaki: Appl. Phys. Lett., 23 (1973), 201–203.

2. 2) A. Y. Cho and P. D. Dernier: J. Appl. Phys., 49 (1978), 3328–3332.

3. 3) J. Massies, J. Chaplart and N. T. Linh: Solid State Commun., 32 (1979), 707–709.

4. 4) S. Sugawara: Mater. Trans., JIM, 37 (1996), 1293–1297.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preferentially Oriented Growth of Al Thin Films Deposited Rapidly on Si (100) and (111) Substrates;Journal of the Japan Institute of Metals;2009

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