Preferentially Oriented Growth of Al Thin Films Deposited Rapidly on Si (100) and (111) Substrates-Reference-Cited by-同舟云学术

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Preferentially Oriented Growth of Al Thin Films Deposited Rapidly on Si (100) and (111) Substrates

Published:2009 Issue:12 Volume:73 Page:906-912
ISSN:1880-6880
Container-title:Journal of the Japan Institute of Metals
language:ja
Short-container-title:J. Japan Inst. Metals

Author:

Sugawara Shigeo,Takahashi Hisao,Ishigaki Masatoshi,Goto Daisuke,Komori Daisuke

Publisher

Japan Institute of Metals

Subject

Materials Chemistry,Metals and Alloys,Mechanics of Materials,Condensed Matter Physics

Link

https://www.jstage.jst.go.jp/article/jinstmet/73/12/73_12_906/_pdf

Reference10 articles.

1. Epitaxial growth of Al on Si(111) and Si(100) by ionized‐cluster beam

2. Aluminium epitaxy on Si(111) and Si(100) using an ionized cluster beam

3. Molecular beam epitaxy of alternating metal‐semiconductor films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of chemical structure and Si segregation of Al/Si(111);Japanese Journal of Applied Physics;2023-02-09

2. Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure;Japanese Journal of Applied Physics;2022-06-13

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