Packaging Technology for High Temperature Operation of Power Semiconductor Modules-Reference-Cited by-同舟云学术

Packaging Technology for High Temperature Operation of Power Semiconductor Modules

Published:2014 Issue:6 Volume:17 Page:464-468
ISSN:1343-9677
Container-title:Journal of The Japan Institute of Electronics Packaging
language:en
Short-container-title:Journal of Japan Institute of Electronics Packaging

Author:

Morozumi Akira,Nishimura Yoshitaka,Ikeda Yoshinari,Mochizuki Eiji,Takahashi Yoshikazu

Publisher

Japan Institute of Electronics Packaging

Subject

Electrical and Electronic Engineering

Link

https://www.jstage.jst.go.jp/article/jiep/17/6/17_464/_pdf

Reference9 articles.

1. 3) T. Saito, et al.: “New assembly technologies for Tjmax.=175°C continuous operation guaranty of IGBT module,” Proceedings of PCIM Europe 2013, Nuremberg, pp. 455-461, 2013

2. 5) Y. Ikeda, et al.: “A study of the bonding-wire reliability on the chip surface electrode in IGBT,” Proceedings of The 22^nd International Symposium on Power Semiconductor Devices & ICs, Hiroshima, pp. 289-292, 2010

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