Apparent high mobility ~30 cm<sup>2</sup>/Vs of amorphous In–Ga–Zn–O thin-film transistor and its origin-Reference-Cited by-同舟云学术

Apparent high mobility ~30 cm²/Vs of amorphous In–Ga–Zn–O thin-film transistor and its origin

Published:2013 Issue:1411 Volume:121 Page:295-298
ISSN:1348-6535
Container-title:Journal of the Ceramic Society of Japan
language:en
Short-container-title:J. Ceram. Soc. Japan

Author:

XIAO Zewen¹,DOMEN Kay¹,KAMIYA Toshio¹,HOSONO Hideo¹²

Affiliation:

1. Materials and Structure Laboratory, Tokyo Institute of Technology

2. Frontier Research Center, Tokyo Institute of Technology

Publisher

Ceramic Society of Japan

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry,Ceramics and Composites

Link

https://www.jstage.jst.go.jp/article/jcersj2/121/1411/121_JCSJ-P12204/_pdf

Reference14 articles.

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5. 5) H.-H. Lu, H.-C. Ting, T.-H. Shih, C.-Y. Chen, C.-S. Chuang and Y. Lin, SID Symposium Digest of Technical Papers, 41, 1136–1138 (2010).

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