(Bi,La)4Ti3O12 as a ferroelectric layer and SrTa2O6 as a buffer layer for metal-ferroelectric-metal-insulator-semiconductor field-effect transistor-Reference-Cited by-同舟云学术

(Bi,La)4Ti3O12 as a ferroelectric layer and SrTa2O6 as a buffer layer for metal-ferroelectric-metal-insulator-semiconductor field-effect transistor

Published:2009 Issue:1369 Volume:117 Page:1032-1034
ISSN:1348-6535
Container-title:Journal of the Ceramic Society of Japan
language:en
Short-container-title:J. Ceram. Soc. Japan

Author:

KIM Joo-Nam¹,CHOI Yun-Soo²,PARK Byung-Eun¹

Affiliation:

1. School of Electrical and Computer Engineering, University of Seoul

2. Department of Geo-informatics, University of Seoul

Publisher

Ceramic Society of Japan

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry,Ceramics and Composites

Link

http://www.jstage.jst.go.jp/article/jcersj2/117/1369/117_1369_1032/_pdf

Reference10 articles.

1. 1) H. Ishiwara, Device Research Conference Digest 57^th Annual, (1999) pp. 6-9.

2. Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures

3. 3) J. H. Kim, J. N. Kim, K. H. Park and B. E. Park, Proceedings of the 16th IEEE International Symposium on the Applications of Ferroelectrics, (2007) pp. 65-68.

4. 4) Y. Nakao, T. Nakamura and H. Ishiwara, IEEE Elec. Dev. Lett., 8, 160-162 (1997).

5. Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures

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