Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1380246
Reference11 articles.
1. Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures
2. Fabrication of PbZrxTi1-xO3Films on Si Structures Using Y2O3Buffer Layers
3. Memory effects of SrBi2Ta2O9 capacitor on silicon with a silicon nitride buffer
4. Preparation of Bi4Ti3O12Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure
5. Current Status of Fabrication and Integration of Ferroelectric-Gate Fet's
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