Special Issue Ceramics Integration. Role of Ultra Thin SiOx Layer for Epitaxial Growth of YSZ/SiOx/(001)Si Thin Films.
Author:
Affiliation:
1. Center for Advanced Materials Analysis, Tokyo Institute of Technology
2. Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology
Publisher
Ceramic Society of Japan
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry,Ceramics and Composites
Link
http://www.jstage.jst.go.jp/article/jcersj1988/110/1281/110_1281_338/_pdf
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mechanisms of epitaxy and defects at the interface in ultrathin YSZ films on Si(001);CrystEngComm;2012
2. Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111);Japanese Journal of Applied Physics;2006-12-15
3. Room-Temperature Electrical-Field Induced Oxygen Diffusion of Aluminum/Yttria-Stabilized Zirconia Thin Film Grown on Si Substrate;Japanese Journal of Applied Physics;2006-11-08
4. High-temperature in situ Cross-sectional Transmission Electron Microscopy Investigation of Crystallization Process of Yttrium-stabilized Zirconia/Si and Yttrium-stabilized Zirconia/SiOx/Si Thin Films;Journal of Materials Research;2005-07-01
5. IN-SITU TEM INVESTIGATION OF STRUCTURAL CHANGES IN ZIRCONIA/SILICON HETEROSTRUCTURES AT ELEVATED TEMPERATURE;International Journal of Nanoscience;2004-12
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