IN-SITU TEM INVESTIGATION OF STRUCTURAL CHANGES IN ZIRCONIA/SILICON HETEROSTRUCTURES AT ELEVATED TEMPERATURE-Reference-Cited by-同舟云学术

IN-SITU TEM INVESTIGATION OF STRUCTURAL CHANGES IN ZIRCONIA/SILICON HETEROSTRUCTURES AT ELEVATED TEMPERATURE

Published:2004-12 Issue:06 Volume:03 Page:699-705
ISSN:0219-581X
Container-title:International Journal of Nanoscience
language:en
Short-container-title:Int. J. Nanosci.

Author:

KIGUCHI TAKANORI¹,WAKIYA NAOKI²,SHINOZAKI KAZUO²,MIZUTANI NOBUYASU¹²

Affiliation:

1. Center for Advanced Materials Analysis, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8550, Japan

2. Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan

Abstract

The crystallization process of Yttria Stabilized Zirconia (YSZ) thin film and the growth process of silicon oxide ( SiO x) have been directly investigated by in-situ heating TEM method from plan-view and cross-sectional directions. The YSZ layer is crystallized by the nucleation and growth mechanism. The nucleation is started from the surface region of the YSZ layer. Ultra thin SiO x layer on the surface of Si substrate plays an important role in the strain relaxation in the crystallization process.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219581X04002656

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