Finite Element Method for MRAM Switching Simulations-Reference-Cited by-同舟云学术

Finite Element Method for MRAM Switching Simulations

Published:2022-12-31 Issue: Volume:17 Page:585-588
ISSN:2224-2856
Container-title:WSEAS TRANSACTIONS ON SYSTEMS AND CONTROL
language:en
Short-container-title:

Author:

Fiorentini S.¹,De Orio R. L.¹,Ender J.¹,Selberherr S.¹,Bendra M.¹,Jørstad N.¹,Goes Wolfgang²,Sverdlov V.¹

Affiliation:

1. Christian Doppler Laboratory for Nonvolatile Magnetoresisitive Memory and Logic at the Institute for Microelectronics, Tu Wien, Gußhausstraße 27–29/e360, 1040 Vienna, Austria

2. Silvaco Europe Ltd., Cambridge, United Kingdom

Abstract

The development of reliable simulation tools provides a valuable help in the design of modern MRAMdevices. Thanks to its versatility in the choice of meshes and discretization, the finite element method is a useful framework for the numerical solution of the magnetization dynamics. We review a finite element implementation of both the Landau-Lifshitz-Gilbert equation and the spin and charge drift-diffusion formalism in a solver employing open source software. The presented approach is successfully applied to emerging multilayered MRAM cells.

Publisher

World Scientific and Engineering Academy and Society (WSEAS)

Subject

Artificial Intelligence,General Mathematics,Control and Systems Engineering

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