A Reflow-capable, Embedded 8Mb STT-MRAM Macro with 9nS Read Access Time in 16nm FinFET Logic CMOS Process-Reference-Cited by-同舟云学术

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A Reflow-capable, Embedded 8Mb STT-MRAM Macro with 9nS Read Access Time in 16nm FinFET Logic CMOS Process

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
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Author:

Shih Yi-Chun,Lee Chia-Fu,Chang Yen-An,Lee Po-Hao,Lin Hon-Jarn,Chen Yu-Lin,Lo Chieh-Pu,Lin Ku-Feng,Chiang Tien-Wei,Lee Yuan-Jen,Shen Kuei-Hung,Wang Roger,Wang Wayne,Chuang Harry,Wang Eric,Chih Yu-Der,Chang Jonathan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09372115.pdf?arnumber=9372115

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4. Pitch Scaling Prospect of Ultra-Small Magnetic Tunnel Junctions for High-Density STT-MRAM: Effects of Magnetostatic Interference From Neighboring Bits;IEEE Electron Device Letters;2024-02

5. Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities;npj Spintronics;2024-01-04

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