22nm STT-MRAM for Reflow and Automotive Uses with High Yield, Reliability, and Magnetic Immunity and with Performance and Shielding Options-Reference-Cited by-同舟云学术

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22nm STT-MRAM for Reflow and Automotive Uses with High Yield, Reliability, and Magnetic Immunity and with Performance and Shielding Options

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Gallagher W.J.,Lee George,Shih Yi-Chun,Lee Chia-Fu,Lee Po-Hao,Wang Roger,Shen Kuei- Hung,Wu J. J.,Wang Wayne,Chuang Harry,Chien Eric,Chiang Tien-Wei,Huang Jian-Cheng,Shih Meng-Chun,Wang C.Y.,Weng Chih-Hui,Chen Sean,Bair Christine

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993469.pdf?arnumber=8993469

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