Characterization of Wide Bandgap Device for Cryogenically-Cooled Power Electronics in Aircraft Applications
Author:
Affiliation:
1. University of Tennessee, Knoxville
Publisher
American Institute of Aeronautics and Astronautics
Link
https://arc.aiaa.org/doi/pdf/10.2514/6.2018-5006
Reference12 articles.
1. Characterization of high-voltage high-speed switching power semiconductors for high frequency cryogenically-cooled application
2. Power MOSFET analysis/optimization for cryogenic operation including the effect of degradation in breakdown voltage
3. An investigation into the utilisation of power MOSFETs at cryogenic temperatures to achieve ultra-low power losses
4. Properties of high-power Cryo-MOSFETs
5. IGBT operation at cryogenic temperatures: non-punch-through and punch-through comparison
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