Properties of high-power Cryo-MOSFETs-Reference-Cited by-同舟云学术

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Properties of high-power Cryo-MOSFETs

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Container-title:IAS '96. Conference Record of the 1996 IEEE Industry Applications Conference Thirty-First IAS Annual Meeting
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Author:

Mueller O.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/4112/12178/00559256.pdf?arnumber=559256

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design, Operation, and Loss Characterization of a 1-kW GaN-Based Three-Level Converter at Cryogenic Temperatures;IEEE Transactions on Power Electronics;2020-11

2. Development of High-Power High Switching Frequency Cryogenically Cooled Inverter for Aircraft Applications;IEEE Transactions on Power Electronics;2020-06

3. Review of Power Electronics Components at Cryogenic Temperatures;IEEE Transactions on Power Electronics;2020-05

4. Characterization of Wide Bandgap Device for Cryogenically-Cooled Power Electronics in Aircraft Applications;2018 AIAA/IEEE Electric Aircraft Technologies Symposium;2018-07-08

5. Cryogenic power electronics at megawatt-scale using a new type of press-pack IGBT;IOP Conference Series: Materials Science and Engineering;2017-12

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