Cryogenic Temperature Characterizations of State-of-the-art Cascode 900 V GaN FET
Author:
Affiliation:
1. University of Arkansas, Fayetteville
Publisher
American Institute of Aeronautics and Astronautics
Link
https://arc.aiaa.org/doi/pdf/10.2514/6.2021-3323
Reference9 articles.
1. Review of Power Electronics Components at Cryogenic Temperatures
2. A review of cryogenic power electronics - status and applications
3. Survey of Cryogenic Power Electronics for Hybrid Electric Aircraft Applications
4. Cryogenic Power Conversion Systems: The next step in the evolution of power electronics technology.
5. Characterization of 1.2 kV SiC Power MOSFETs at Cryogenic Temperatures
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Development of Gate Drive Configuration for GaN Based Cryogenic Power Electronics Converters;IEEE Transactions on Industry Applications;2023-11
2. Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors;Electronics;2023-10-27
3. Power Relays Based Novel Circuit with Multiple Device Characterization Capability for Cryogenic Applications;2022 IEEE Transportation Electrification Conference & Expo (ITEC);2022-06-15
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