Resistive Interconnection Localization-Reference-Cited by-同舟云学术

Resistive Interconnection Localization

Published:2001-10-01 Issue: Volume: Page:
ISSN:0890-1740
Container-title:ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis
language:
Short-container-title:

Author:

Cole Edward I.¹,Tangyunyong Paiboon¹,Hawkins Charles F.²,Bruce Michael R.³,Bruce Victoria J.³,Chong Wan-Loong³,Ring Rosalinda M.⁴

Affiliation:

1. Sandia National Laboratories, Albuquerque, NM

2. University of New Mexico

3. Advanced Micro Devices, Inc.

4. Formerly Advanced Micro Devices, Inc.

Abstract

Abstract Resistive Interconnection Localization (RIL) is a new scanning laser microscope analysis technique that directly and rapidly localizes defective IC vias, contacts, and conductors from the front side and backside. RIL uses a scanned laser to produce localized thermal gradients in IC interconnections during functional testing. A change in the pass/fail state with localized heating of the IC identifies the failing site. The technique reduces the time to locate a resistive via from months to minutes. The sources of defective vias, the physics of RIL signal generation, and examples of RIL analysis are presented.

Publisher

ASM International

Link

http://dl.asminternational.org/istfa/proceedings-pdf/doi/10.31399/asm.cp.istfa2001p0043/411428/istfa2001p0043.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fast and rigorous use of thermal time constant to characterize back end of the line test structure in advanced technology;Microelectronics Reliability;2008-08

2. Fault localization at high voltage devices using thermally induced voltage alteration (TIVA);Microelectronics Reliability;2007-09

3. Failure Analysis;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

4. Failure analyses for debug and ramp-up of modern IC’s;Microelectronics Reliability;2006-09

5. Thermal modeling of localized laser heating in multi-level interconnects;Microelectronics Reliability;2003-02