Impact of Single Defects on NBTI and PBTI Recovery in SiO<sub>2</sub> Transistors-Reference-Cited by-同舟云学术

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Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ Transistors

Published:2022-10-09 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Integrated Reliability Workshop (IIRW)
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Author:

Tselios K.¹,Knobloch T.²,Michl J.¹,Waldhoer D.²,Schleich C.¹,Ioannidis E.³,Enichlmair H.³,Minixhofer R.³,Grasser T.²,Waltl M.¹

Affiliation:

1. Institute for Microelectronics,Christian Doppler Laboratory for Single-Defect Spectroscopy,TU Wien,Vienna,Austria

2. Institute for Microelectronics,TU Wien,Vienna,Austria

3. ams-OSRAM AG,Premstatten,Austria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10032732/10032733/10032748.pdf?arnumber=10032748

Reference21 articles.

1. Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics

2. Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors

3. Relaxation Effects in MOS Devices due to Tunnel Exchange with Near-Interface Oxide Traps;tewksbury;Ph D thesis,1992

4. On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors

5. Modeling the VTH fluctuations in nanoscale Floating Gate memories

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